Artículos en revistas:
Transport properties of CuGaSe(2)-based thin-film solar cells as a function of absorber composition
Año:2011
Áreas de investigación
- Física química y matemáticas,
- Tecnología electrónica y de las comunicaciones,
- Tecnología química
Datos
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Descripción
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| The transport properties of thin-film solar cells based on wide-gap CuGaSe(2) absorbers have been investigated as a function of the bulk [Ga]/[Cu] ratio ranging from 1.01 to 1.33. We find that (i) the recombination processes in devices prepared from absorbers with a composition close to stoichiometry ([Ga]/[Cu] = 1.01) are strongly tunnelling assisted resulting in low recombination activation energies (E(a)) of approx. 0.95 eV in the dark and 1.36 eV under illumination. (ii) With an increasing [Ga]/[Cu] ratio, the transport mechanism changes to be dominated by thermally activated Shockley-Read-Hall recombination with similar E(a) values of approx. 1.52-1.57 eV for bulk [Ga]/[Cu] ratios of 1.12-1.33. The dominant recombination processes take place at the interface between CdS buffer and CuGaSe(2) absorber independently from the absorber composition. The increase of E(a) with the [Ga]/[Cu] ratio correlates with the open circuit voltage and explains the better performance of corresponding solar cells. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Thin Solid Films |
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ISSN
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0040-6090 |
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Factor de impacto JCR
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1,909 |
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Información de impacto
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Volumen
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519 |
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DOI
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10.1016/j.tsf.2011.01.185 |
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Número de revista
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21 |
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Desde la página
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7304 |
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Hasta la página
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7307 |
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Mes
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SIN MES |
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Ranking
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Participantes
- Autor: David Fuertes Marron UPM
- Autor: M. Rusu
- Autor: M. Bar
- Autor: S. Lehman
- Autor: T. Schedel-Niedrig
- Autor: M. Lux-Steiner
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
- Centro o Instituto I+D+i: Instituto de Energía Solar
- Departamento: Electrónica Física