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Descripción
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| The concept of intermediate band (IB) formed by quantum dots or impurities has been proposed as a way to surpass the limiting efficiency of solar cells. Although still under development, proof of such a concept has been demonstrated in the field of nanostructured III-V-based devices. Additionally, recent theoretical studies have suggested the potential of implementing IBs into thin-film solar cells. Binary and multinary thin-film chalcogenides appear as good candidates to evaluate the possibility of forming an IB by means of incorporating selected impurities. We have performed experiments on polycrystalline In2S3 films and studied the effects of Cu impurities introduced into the chalcogenide during the growth process. Under specific synthesis conditions, related to an adequate Cu-distribution, optical measurements have shown the appearance of a discrete absorption band around 1.5-1.6 eV, which could potentially fulfill conditions as required for IB-operation. Additionally, we report on the optimisation of the bandgap of the In2S3 host compound for optimal IB-operation through the introduction of Na atoms at cationic vacancies. | |
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Internacional
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Si |
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Nombre congreso
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E-MRS Spring Meeting |
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Tipo de participación
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960 |
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Lugar del congreso
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Estrasburgo, Francia |
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Revisores
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Si |
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ISBN o ISSN
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00-0000-000-0 |
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DOI
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Fecha inicio congreso
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09/05/2011 |
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Fecha fin congreso
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13/05/2011 |
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Desde la página
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1 |
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Hasta la página
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2 |
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Título de las actas
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Proc. EMRS_Spring Meeting |