Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Growth of AlN oriented films on insulating substrates
Year:2011
Research Areas
  • Electronic technology and of the communications
Information
Abstract
This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.
International
Si
Congress
2011 IEEE International Ultrasonics Symposium
960
Place
Orlando, EE. UU.
Reviewers
Si
ISBN/ISSN
1051-0117
10.1109/ULTSYM.2011.0428
Start Date
18/10/2011
End Date
21/10/2011
From page
1716
To page
1719
2011 IEEE International Ultrasonics Symposium Proc.
Participants
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: José Capilla Osorio (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Enrique Iborra Grau (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
  • Departamento: Tecnología Electrónica
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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