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Memorias de investigación
Communications at congresses:
Individualization and Electrical Characterization of SiGe Nanowires
Year:2011
Research Areas
  • Physics - Structure of materials,
  • Electronic technology and of the communications
Information
Abstract
SiGe nanowires of different Ge atomic fractions up to 15% were grown and ex-situ n-type doped by diffusion from a solid source in contact with the sample. The phenomenon of dielectrophoresis was used to locate single nanowires between pairs of electrodes in order to carry out electrical measurements. The measured resistance of the as-grown nanowires is very high, but it decreases more than three orders of magnitude upon doping, indicating that the doping procedure used has been effective
International
Si
Congress
Materials Research Society 2011 Fall Meeting
960
Place
Boston (USA)
Reviewers
Si
ISBN/ISSN
02729172
10.1557/opl.2012.33
Start Date
28/11/2011
End Date
02/12/2011
From page
1
To page
6
Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications. Materials Research Society Symposium Proceedings 1408, BB10-06 (2012), 6 pp.
Participants
  • Autor: Manuel Monasterio (DTE-UPM)
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Tomas Rodriguez Rodriguez (UPM)
  • Autor: Carnen Ballesteros (UC3M)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Conectividad
  • Departamento: Tecnología Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)