Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Cubic and hexagonal InGaAsN dilute arsenides by unintentional homogeneous incorporation of As into InGaN
Year:2012
Research Areas
  • Physic chemistry,
  • Electric engineers, electronic and automatic (eil),
  • Materials for electric engineering and electronics
Information
Abstract
Arsenic alloying is observed for epitaxial layers nominally intended to be In0.75Ga0.25N. Voids form beneath their interfaces with GaAs substrates, acting as sources of Ga + As out-diffusion into the growing epilayers. As a result, heteroepitaxial single-phase quaternary InxGa1-xAsyN1-y, films are formed with x similar to 0.55 and 0.05 < y < 0,10. While an undoped epilayer retains the wurtzite structure, a Mn-doped sample showed randomly spaced dopant segregations, which, together with a slightly higher As concentration, led to a transformation from the hexagonal to the twinned cubic phase.
International
Si
JCR
Si
Title
Scripta Materialia
ISBN
1359-6462
Impact factor JCR
2,699
Impact info
Volume
66
10.1016/j.scriptamat.2011.11.025
Journal number
6
From page
351
To page
354
Month
SIN MES
Ranking
Participants
  • Autor: F.M. Morales
  • Autor: D. Carvalho
  • Autor: T. Ben
  • Autor: R. García
  • Autor: S.I. Molina
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Antonio Luque Lopez (UPM)
  • Autor: C.R. Staddon
  • Autor: R.P. Campion
  • Autor: C.T. Foxon
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)