Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Ionization levels of doped copper indium sulfide chalcopyrites
Year:2012
Research Areas
  • Chemistry,
  • Electric engineers, electronic and automatic (eil),
  • Electronic devices,
  • Materials for electric engineering and electronics,
  • Technology of devices for engineering
Information
Abstract
The electronic structure of modified chalcopyrite CuInS2 has been analyzed from first principles within the density functional theory. The host chalcopyrite has been modified by introducing atomic impurities M at substitutional sites in the lattice host with M = C, Si, Ge, Sn, Ti, V, Cr, Fe, Co, Ni, Rh, and Ir. Both substitutions M for In and M for Cu have been analyzed. The gap and ionization energies are obtained as a function of the M-S displacements. It is interesting for both spintronic and optoelectronic applications because it can provide significant information with respect to the pressure effect and the nonradiative recombination.
International
Si
JCR
Si
Title
Journal of Physical Chemistry a
ISBN
1089-5639
Impact factor JCR
2,946
Impact info
Volume
116
10.1021/jp209594u
Journal number
5
From page
1390
To page
1395
Month
SIN MES
Ranking
Participants
  • Autor: Cesar Tablero Crespo (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)