Memorias de investigación
Artículos en revistas:
Electronic, structural, and optical properties of the host and Cr-doped cadmium thioindate
Año:2012
Áreas de investigación
  • Química física,
  • Fisica sb -- semiconductores y estructura de bandas,
  • Fisica qp -- fisica cuantica
Datos
Descripción
The cadmium thioindate spinel CdIn2S4 semiconductor has potential applications for optoelectronic devices. We present a theoretical study of the structural and optoelectronic properties of the host and of the Cr-doped ternary spinel. For the host spinel, we analyze the direct or indirect character of the energy bandgap, the change of the energy bandgap with the anion displacement parameter and with the site cation distribution, and the optical properties. The main effect of the Cr doping is the creation of an intermediate band within the energy bandgap. The character and the occupation of this band are analyzed for two substitutions: Cr by In and Cr by Cd. This band permits more channels for the photon absorption. The optical properties are obtained and analyzed. The absorption coefficients are decomposed into contributions from the different absorption channels and from the inter-and intra-atomic components.
Internacional
Si
JCR del ISI
Si
Título de la revista
Journal of Applied Physics
ISSN
0021-8979
Factor de impacto JCR
2,168
Información de impacto
Volumen
112
DOI
10.1063/1.4764339
Número de revista
9
Desde la página
093108-1
Hasta la página
093108-7
Mes
SIN MES
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Participantes
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física