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Descripción
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| This paper presents a wide band compact high isolation silicon switching circuit, which is based on the series-shunt switch design with three silicon switches made of diced high resistivity silicon wafer placed over a microstrip gap and activated by 808nm near-infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz. | |
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Internacional
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Si |
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Nombre congreso
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IEEE International Topical Meeting on Microwave Photonics (MWP) 2012 |
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Tipo de participación
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960 |
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Lugar del congreso
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The European Space Agency / ESA-ESTEC, Noordwijk, The Netherlands |
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Revisores
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Si |
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ISBN o ISSN
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978-1-4673-2863-0 |
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DOI
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Fecha inicio congreso
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11/09/2012 |
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Fecha fin congreso
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14/09/2012 |
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Desde la página
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224 |
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Hasta la página
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227 |
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Título de las actas
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978-1-4673-2863-0 |