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Descripción
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| One of the key steps to achieve high efficiencies in amorphous/crystalline silicon photovoltaic structures is to design low-ohmic-resistance back contacts with good passivation in the rear part of the cell. A well known approach to achieve this goal is to use laser-fired contact (LFC) processes in which a metal layer is fired through the dielectric to define good contacts with the semiconductor. However, and despite the fact that this approach has demonstrated to be extremely successful, there is still enough room for process improvement with an appropriate optimization. In this paper, a study focused on the optimal adjustment of the irradiation parameters to produce laser-fired contacts in a-Si:H/c-Si heterojunction solar cells is presented. We used samples consisting of crystalline-silicon (c-Si) wafers together with a passivation layer of intrinsic hydrogenated amorphous silicon (a-Si:H(i)) deposited by plasma-enhanced chemical deposition (PECVD). Then, an aluminum layer was evaporated on both sides, the thickness of this layer varied from 0.2 to 1 ?m in order to identify the optimal amount of Al required to create an appropriate contact. A q-switched Nd:YVO4 laser source, ? = 532 nm, was used to locally fire the aluminum through the thin a-Si:H(i)-layers to form the LFC. The effects of laser fluences were analyzed using a comprehensive morphological and electrical characterization. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Applied Surface Science |
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ISSN
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0169-4332 |
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Factor de impacto JCR
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2,103 |
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Información de impacto
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Volumen
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258 |
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DOI
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http://dx.doi.org/10.1016/j.apsusc.2011.09.108 |
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Número de revista
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23 |
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