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Descripción
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| Laser Doping (LD) has become a good alternative to furnace diffusion processes typically employed for the fabrication of crystalline silicon (c-Si) solar cells. This laser technique offers a wide versatility, since it allows the creation of locally doped regions without lithography. Such doped regions can be used to generate a Back Surface Field (BSF) effect as well as to act as selective emitters. In this work, we apply the LD technique to create p+ regions from three different solid sources deposited onto n-type c-Si wafers. The materials selected as solid dopant sources are: Aluminum Oxide (Al2O3) layers with different thicknesses, solidified Boron Spin-on-Dopant Solution (SOD), and finally, evaporated aluminum. A pulsed Nd-YAG 1064 nm laser in nanosecond regime is employed to create the p+ doped regions. Laser parameters such as pulse energy, pulse duration and number of pulses, are varied in order to find the conditions leading to the optimal electrical behavior of the formed junctions. The resulting exponential behavior of the J-V curves evidences the formation of p+-n junctions. Furthermore, the ideality factors, extracted from the J-V curves, exhibit a strong dependence on the chosen dopant source. The Aluminum Oxide source leads to the best electrical results with local ideality factors close to unity. Thus, it is possible to estimate values of about 660 mV and 200 fA/cm2 for open circuit voltage (Voc) and emitter saturation current density (J0e) respectively, for a hypothetical solar cell fabricated with an Al2O3 laser emitter. | |
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Internacional
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Si |
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Nombre congreso
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27th European Photovoltaic Solar Energy Conference and Exhibition |
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Tipo de participación
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960 |
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Lugar del congreso
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Frankfurt (Alemania) |
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Revisores
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Si |
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ISBN o ISSN
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3-936338-28-0 |
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DOI
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Fecha inicio congreso
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24/09/2012 |
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Fecha fin congreso
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28/09/2012 |
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Desde la página
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1885 |
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Hasta la página
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1889 |
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Título de las actas
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27th European Photovoltaic Solar Energy Conference and Exhibition Proceedings of the international Conference held in Frankfurt, Germany 24 - 28 September 2012 |