Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
SiGe/Si nanowire axial heterostructures grown by LPCVD using Ga-Au
Year:2012
Research Areas
  • Phisics,
  • Electronic technology and of the communications
Information
Abstract
The use of Ga-Au alloys of different compositions as metal catalysts for the growth of abrupt SiGe/Si nanowire axial heterostructures has been investigated. The heterostructures grown in a continuous process by just switching the gas precursors, show uniform nanowire diameters, almost abrupt compositional changes and no defects between the different sections. These features represent significant improvements over the results obtained using pure Au.
International
Si
Congress
Materials Research Society 2012 Fall Meeting
960
Place
Boston
Reviewers
Si
ISBN/ISSN
1946-4274
DOI: 10.1557/opl.2013.273
Start Date
25/11/2012
End Date
30/11/2012
From page
1
To page
6
Materials Research Society Symposium Proceedings 1510, MRS Online Proceedings Library
Participants
  • Autor: Andres Rodriguez Dominguez (UPM)
  • Autor: Tomas Rodriguez Rodriguez (UPM)
  • Autor: C. Ballesteros (U. Carlos III)
  • Autor: J. Jiménez (UI. Valladolid)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Conectividad
  • Departamento: Tecnología Electrónica
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