Artículos en revistas:
Electrical decoupling effect on intermediate band Ti-implanted silicon layers
Año:2013
Áreas de investigación
- Dispositivos electrónicos,
- Células solares
Datos
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Descripción
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| We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measurements, which is associated with the formation of an intermediate band (IB) in the implanted layer. An analytical model that assumes IB formation and a current limitation effect between the implanted layer and the substrate was developed to analyse this anomalous behaviour. This model also describes the behaviour of the function V/Delta V and the electrical function F that can be extracted from the electrical measurements in the bilayer. After chemical etching of the implanted layer, the anomalous electrical behaviour observed in sheet resistance and Hall mobility measurements vanishes, recovering the unimplanted Si behaviour, in agreement with the analytical model. The behaviour of V/Delta V and the electrical function F can also be successfully described in terms of the analytical model in the bilayer structure with the implanted layer entirely stripped. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Journal of Physics D-Applied Physics |
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ISSN
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0022-3727 |
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Factor de impacto JCR
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2,528 |
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Información de impacto
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Volumen
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46 |
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DOI
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Número de revista
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13 |
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Desde la página
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135108-1 |
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Hasta la página
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135108-6 |
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Mes
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SIN MES |
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Ranking
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Participantes
- Autor: D. Pastor
- Autor: Javier Olea Ariza UPM
- Autor: A. del Prado
- Autor: E. Garcia-Hemme
- Autor: R. Garcia-Hernansanz
- Autor: I. Martil
- Autor: G. Gonzalez-Diaz
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
- Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
- Centro o Instituto I+D+i: Instituto de Energía Solar