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Communications at congresses:
Induced Surface Roughness to Promote the Growth of Tilted-AlN Films for Shear Mode Resonators
Year:2013
Research Areas
  • Electronic technology and of the communications
Information
Abstract
Two methods currently used to induce surface roughness that promotes the growth of AlN tilted grains to fabricate shear mode resonators have been investigated. The first one involves the use of a rough substrate to provide tilted facets on which the AlN grains will grow with a certain angle. The second method is based on using a thin non-piezoelectric AlN seed layer that exhibits high populations of {10·3} and {10·2} planes. The influence of the power applied to the Al target and the total gas pressure during the deposition process of the AlN seed layer has been studied and correlated with the k2 shear of the resonators. The best fabricated devices show a shear mode resonance frequency at around 1.45 GHz, a k2 shear up to 3.64% and a Qshear above 230 when operating in air, which reduces to 108 when operating in liquid.
International
Si
Congress
2013 Joint UFFC, EFTF and PFM Symposium
960
Place
Praga, República Checa
Reviewers
Si
ISBN/ISSN
978-1-4799-0342-9
Start Date
21/07/2013
End Date
25/07/2013
From page
274
To page
277
2013 Joint UFFC, EFTF and PFM Symposium Proceedings
Participants
  • Autor: Mario De Miguel Ramos (UPM)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: José Capilla Osorio (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Enrique Iborra Grau (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
  • Departamento: Tecnología Electrónica
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