Descripción
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The control of the SiGe NW composition is fundamental for the fabrication of high quality heterostructures. Raman spectroscopy has been used to analyse the composition of SiGe alloys. We present a study of the Raman spectrum of SiGe nanowires and SiGe/Si heterostructures. The inhomogeneity of the Ge composition deduced from the Raman spectrum is explained by the existence of a Ge-rich outer shell and by the interaction of the NW with the electromagnetic field associated with the laser beam. | |
Internacional
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Si |
Nombre congreso
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2013 Materials Research Society Fall Meeting and Exhibit |
Tipo de participación
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960 |
Lugar del congreso
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Boston , Massachusets |
Revisores
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Si |
ISBN o ISSN
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0000-0000-00 |
DOI
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10.1557/opl.2014.197 |
Fecha inicio congreso
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01/12/2013 |
Fecha fin congreso
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06/06/2014 |
Desde la página
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143 |
Hasta la página
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148 |
Título de las actas
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MRS Online Proceedings Library MRS Proceedings, 1659 ISSN: 1946-4274 (No aceptada por aplicación) |