Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells
Year:2014
Research Areas
  • Electronic devices,
  • Solar cells,
  • Technology of devices for engineering
Information
Abstract
In recent years, all the operating principles of intermediate band behaviour have been demonstrated in InAs/GaAs quantum dot (QD) solar cells. Having passed this hurdle, a new stage of research is underway, whose goal is to deliver QD solar cells with efficiencies above those of state-of-the-art single-gap devices. In this work, we demonstrate that this is possible, using the present InAs/GaAs QD system, if the QDs are made to be radiatively dominated, and if absorption enhancements are achieved by a combination of increasing the number of QDs and light trapping. A quantitative prediction is also made of the absorption enhancements required, suggesting that a 30 fold increase in the number of QDs and a light trapping enhancement of 10 are sufficient. Finally, insight is given into the relative merits of absorption enhancement via increasing QD numbers and via light trapping.
International
Si
JCR
Si
Title
Solar Energy Materials And Solar Cells
ISBN
0927-0248
Impact factor JCR
5,03
Impact info
Volume
130
Journal number
From page
225
To page
233
Month
SIN MES
Ranking
Participants
  • Autor: Alexander Virgil Mellor . (UPM)
  • Autor: Ignacio Tobias Galicia (UPM)
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Antonio Luque Lopez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)