Memorias de investigación
Artículos en revistas:
Component integration strategies in metamorphic 4-junction III-V concentrator solar cells
Año:2014
Áreas de investigación
  • Ingeniería eléctrica, electrónica y automática,
  • Dispositivos electrónicos,
  • Células solares
Datos
Descripción
Progressing beyond 3-junction inverted-metamorphic multijunction solar cells grown on GaAs substrates, to 4-junction devices, requires the development of high quality metamorphic 0.7 eV GaInAs solar cells. Once accomplished, the integration of this subcell into a full, Monolithic, series connected, 4J-IMM structure demands the development of a metamorphic tunnel junction lattice matched to the 1eV GaInAs subcell. Moreover, the 0.7 eV junction adds about 2 hours of growth time to the structure, implying a heavier annealing of the subcells and tunnel junctions grown first. The final 4J structure is above 20 Pm thick, with about half of this thickness used by the metamorphic buffers required to change the lattice constant throughout the structure. Thinning of these buffers would help reduce the total thickness of the 4J structure to decrease its growth cost and the annealing time. These three topics: development of a metamorphic tunnel junction for the 4th junction, analysis of the annealing, and thinning of the structure, are tackled in this work. The results presented show the successful implementation of an antimonide-based tunnel junction for the 4th junction and of pathways to mitigate the impact of annealing and reduce the thickness of the metamorphic buffers.
Internacional
Si
JCR del ISI
No
Título de la revista
AIP Conference Proceedings
ISSN
0094-243X
Factor de impacto JCR
Información de impacto
Volumen
1616
DOI
Número de revista
Desde la página
41
Hasta la página
44
Mes
SIN MES
Ranking
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Participantes
  • Autor: Ivan Garcia Vara UPM
  • Autor: J.F. Geisz
  • Autor: R.M. France
  • Autor: M.A. Steiner
  • Autor: D.J. Friedman
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física