Descripción
|
|
---|---|
III-V/Si multijunction solar cells utilizing active Si sub-cells, rather than just Si substrates ? a ?Si-plus? architecture ? hold the potential for high conversion efficiencies on par with pure III-V multijunction structures, but at substantially lower costs. Although a goal of PV researchers for decades, progress to this end has been hampered by issues related to heterovalent (polar/nonpolar) epitaxy and lattice mismatch at the III-V/Si interface. However, recent work on the high-quality epitaxy of GaP on Si(100) substrates as a small-mismatch integration approach, with control and suppression of nucleation-related defects, including antiphase domains, stacking faults, and microtwins, via both MBE [1] and MOCVD [2,3], has provided realistic pathways for the development of these structures. | |
Internacional
|
Si |
Nombre congreso
|
40th IEEE Photovoltaic Specialists Conference (40th IEEE PVSC) |
Tipo de participación
|
960 |
Lugar del congreso
|
Denver, CO (EEUU) |
Revisores
|
Si |
ISBN o ISSN
|
978-1-4799-4398-2 |
DOI
|
|
Fecha inicio congreso
|
08/06/2014 |
Fecha fin congreso
|
13/06/2014 |
Desde la página
|
1 |
Hasta la página
|
4 |
Título de las actas
|
Proc. 40th IEEE PVSC |