Memorias de investigación
Artículos en revistas:
Quadruple-Junction inverted metamorphic concentrator devices
Año:2015
Áreas de investigación
  • Dispositivos electrónicos,
  • Células solares
Datos
Descripción
We present results for quadruple-junction inverted metamorphic (4J-IMM) devices under the concentrated direct spectrum and analyze the present limitations to performance. The devices integrate lattice-matched subcells with rear heterojunctions, as well as lattice-mismatched subcells with low threading dislocation density. To interconnect the subcells, thermally stable lattice-matched tunnel junctions are used, as well as a metamorphic GaAsSb/GaInAs tunnel junction between the lattice-mismatched subcells. A broadband antireflection coating is used, as well as a front metal grid designed for high concentration operation. The best device has a peak efficiency of (43.8 ± 2.2)% at 327-sun concentration, as measured with a spectrally adjustable flash simulator, and maintains an efficiency of (42.9 ± 2.1)% at 869 suns, which is the highest concentration measured. The Voc increases from 3.445 V at 1-sun to 4.10 V at 327-sun concentration, which indicates high material quality in all of the subcells. The subcell voltages are analyzed using optical modeling, and the present device limitations and pathways to improvement are discussed. Although further improvements are possible, the 4J-IMM structure is clearly capable of very high efficiency at concentration, despite the complications arising from utilizing lattice-mismatched subcells.
Internacional
Si
JCR del ISI
Si
Título de la revista
Ieee Journal of Photovoltaics
ISSN
2156-3381
Factor de impacto JCR
3
Información de impacto
Volumen
5
DOI
10.1109/jphotov.2014.2364132
Número de revista
1
Desde la página
432
Hasta la página
437
Mes
SIN MES
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Participantes
  • Autor: R.M. France
  • Autor: J.F. Geisz
  • Autor: Ivan Garcia Vara UPM
  • Autor: M.A. Steiner
  • Autor: W.E. McMahon
  • Autor: D.J. Friedman
  • Autor: T.E. Moriarty
  • Autor: C. Osterwald
  • Autor: J.S. Ward
  • Autor: A. Duda
  • Autor: M. Young
  • Autor: W.J. Olavarria
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar