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Memorias de investigación
Communications at congresses:
Sputtered AlScN thin films with high areal uniformity for mass production
Year:2015
Research Areas
  • Electronic technology and of the communications
Information
Abstract
In this work, we describe a sputter technique enabling deposition of AlScN thin films with homogeneous thickness and composition on production size wafers (150-200 mm) and present some preliminary results on the assessment of the structural and piezoelectric properties of the films with Sc content of about 6.5 at.%. The technique is based on the use of pure Sc ingots embedded into the Al targets of the dual-target S-gun magnetron enabling reactive sputtering with high radial thickness and composition homogeneity. Rutherford backscattering was carried out to obtain the film composition. The microstructure and morphology were assessed by X-ray diffraction. Density was determined by X-ray grazing angle reflectometry. Electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. 1 ?m thick films showed wurtzite structure with pure c-axis orientation and rocking curves of the (00·2) diffraction peak with FWHM as low as 1.5º. Film properties appear to be uniform across 150-mm wafers. The material electromechanical coupling factor reached 9%, although the sound velocity of longitudinal mode was relatively low (around 8500 m/s).
International
Si
Congress
2015 Joint Conference of the IEEE International Frequency Control Symposium & the European Frequency and Time Forum
970
Place
Denver, Colorado (EE. UU)
Reviewers
Si
ISBN/ISSN
978-1-4799-8866-2
Start Date
12/04/2015
End Date
16/04/2015
From page
1
To page
4
IEEE IFC-EFTF Joint Conference Proceedings
Participants
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jimena Olivares Roza (UPM)
  • Autor: Teona Mirea (UPM)
  • Autor: Enrique Iborra Grau (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Ingeniería Electrónica
  • Centro o Instituto I+D+i: Centro de Materiales y Dispositivos Avanzados para Tecnologías de Información y Comunicaciones
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