Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Evolution of Radiation-Induced Soft Errors in FinFET SRAMs under Process Variations beyond 22nm
Year:2015
Research Areas
  • Microelectronics,
  • Verification of digital integrate circuits
Information
Abstract
New CMOS technologies such as SOI or FinFET are expected to enhance SRAM radiation-induced soft error rates thanks to a reduction on the charge collected as the devices get smaller. In this work we analyze how the radiation hardening capabilities of SRAMs are affected when process variations are considered by simulating cells using a predictive FinFET technology. The results show that even if the average critical charge to which SRAM cells are vulnerable is enhanced by process variations, its widened spread leads to an increase of the soft error rate by more than 40% as the technology node is scaled down to 7nm.
International
Si
Congress
NANOARCH 2015
970
Place
Boston, E.E.U.U.
Reviewers
Si
ISBN/ISSN
2327-8218
10.1109/NANOARCH.2015.7180596
Start Date
08/07/2015
End Date
10/07/2015
From page
112
To page
117
Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures
Participants
  • Autor: Pablo Royer Del Barrio (UPM)
  • Autor: Fernando Garcia Redondo (UPM)
  • Autor: M. Luisa Lopez Vallejo (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Laboratorio de Sistemas Integrados (LSI)
  • Departamento: Ingeniería Electrónica
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)