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Descripción
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| The measurement of the external quantum efficiency (EQE) of low bandgap subcells in a multijunction solar cell can be sometimes problematic. In particular, this paper describes a set of cases where the EQE of a Ge subcell in a conventional GaInP/GaInAs/Ge triple-junction solar cell cannot be fully measured. We describe the way to identify each case by tracing the I-V curve under the same light-bias conditions applied for the EQE measurement, together with the strategies that could be implemented to attain the best possible measurement of the EQE of the Ge subcell. | |
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Internacional
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Si |
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Nombre congreso
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11th International Conference on Concentrator Photovoltaic Systems - CPV-11 |
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Tipo de participación
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960 |
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Lugar del congreso
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Aix-les-Bains, France |
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Revisores
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Si |
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ISBN o ISSN
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0094-243X |
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DOI
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http://dx.doi.org/10.1063/1.4931510 |
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Fecha inicio congreso
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13/04/2015 |
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Fecha fin congreso
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15/04/2015 |
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Desde la página
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500021 |
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Hasta la página
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500026 |
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Título de las actas
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AIP Conference Proceedings Vol. 1679 |