Memorias de investigación
Artículos en revistas:
The effect of band offsets in quantum dots
Año:2016
Áreas de investigación
  • Células solares
Datos
Descripción
The insertion of quantum dots in a host material produces band offsets which are greatly dependent on the field of strains brought about by this insertion. Based on the Empiric KP Hamiltonian model, the energy spectrum of the quantum dot/host system is easily calculated and a relationship between the conduction and valence band offsets is determined by the energy at which the lowest peak of the sub-bandgap quantum efficiency of an intermediate band solar cell is situated; therefore knowledge of the valence band offset leads to knowledge of both offsets. The calculated sub-bandgap quantum efficiency due to the quantum dot is rather insensitive to the value of the valence band offset. However, the calculated quantum efficiency of the wetting layer, modeled as a quantum well, is sensitive to the valence band offset and a fitting with the measured value is possible resulting in a determination of both offsets in the finished solar cell with its final field of strains. The method is applied to an intermediate-band solar cell prototype made with InAs quantum dots in GaAs.
Internacional
Si
JCR del ISI
Si
Título de la revista
Solar Energy Materials And Solar Cells
ISSN
0927-0248
Factor de impacto JCR
5,03
Información de impacto
Volumen
145
DOI
10.1016/j.solmat.2015.09.051
Número de revista
Desde la página
180
Hasta la página
184
Mes
SIN MES
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Participantes
  • Autor: A. Panchak
  • Autor: Antonio Luque López
  • Autor: A. Vlasov
  • Autor: V.M. Andreev
  • Autor: Antonio Marti Vega UPM
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Departamento: Electrónica Física
  • Centro o Instituto I+D+i: Instituto de Energía Solar