Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Three-Bandgap absolute quantum efficiency in GaSb/GaAs quantum dot intermediate band solar cells
Year:2016
Research Areas
  • Solar cells
Information
Abstract
In this work, we study type-II GaSb/GaAs quantum-dot intermediate band solar cells (IBSCs) by means of quantum efficiency (QE) measurements. We are able, for the first time, to measure an absolute QE which clearly reveals the three characteristic bandgaps of an IBSC; EG, EH, and EL, for which we found the values 1.52, 1.02, and 0.49 eV, respectively, at 9 K. Under monochromatic illumination, QE at the energies EH and EL is 10?4 and 10?8, respectively. These low values are explained by the lack of efficient mechanisms of completing the second sub-bandgap transition when only monochromatic illumination is used. The addition of a secondary light source (E = 1.32 eV) during the measurements produces an increase in the measured QE at EL of almost three orders of magnitude.
International
Si
JCR
Si
Title
Ieee Journal of Photovoltaics
ISBN
2156-3381
Impact factor JCR
3
Impact info
Volume
PP
10.1109/jphotov.2016.2637658
Journal number
99
From page
1
To page
5
Month
SIN MES
Ranking
Participants
  • Autor: Iñigo Ramiro Gonzalez (UPM)
  • Autor: Elisa Antolin Fernandez (UPM)
  • Autor: J. Hwang
  • Autor: A. Teran
  • Autor: A.J. Martin
  • Autor: Pablo Garcia-Linares Fontes (UPM)
  • Autor: J. Millunchick
  • Autor: J. Phillips
  • Autor: Antonio Marti Vega (UPM)
  • Autor: Antonio Luque López
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)