Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Physics-based analytical model for input, output and reverse capacitance of a GaN HEMT with the field-plate structure
Year:2017
Research Areas
  • Engineering
Information
Abstract
This paper presents an analytical model for input, output and reverse capacitance of a normally-on AlGaN/GaN HEMT with a gate field-plate structure, when the device is in the subthreshold regime. Together with the existing model for the output I-V characteristics, the proposed capacitance model provides the complete set of analytical equations that relate the physical design parameters to the electrical characteristics of the device. The model was verified by the experimental characterization of a HEMT. In comparison to the physics-based models implemented in Finite Element Analysis tools, the obtained capacitance model has substantially lower level of complexity and therefore, it is more suitable for implementation into iterative design optimization algorithms. In order to verify the proposed model for such usage, the prototype of a high-frequency buck converter was built, using previously modelled GaN HEMT as the main switch. The hybrid analytical-behavioral power loss model of a high-frequency buck converter was implemented into Simplorer simulation tool, using the proposed physics-based model as the device description for the capacitive part. The efficiency measurements showed good agreement with the simulation results, even at 20MHz of switching frequency in the low range of the output power.
International
Si
JCR
Si
Title
Ieee Transactions on Power Electronics
ISBN
0885-8993
Impact factor JCR
4,953
Impact info
Datos JCR del año 2015
Volume
32
10.1109/TPEL.2016.2569404
Journal number
3
From page
2189
To page
2202
Month
MARZO
Ranking
Participants
  • Autor: Dejana Cucak (UPM)
  • Autor: Miroslav Vasic (UPM)
  • Autor: Oscar Garcia Suarez (UPM)
  • Autor: Jesus Angel Oliver Ramirez (UPM)
  • Autor: Pedro Alou Cervera (UPM)
  • Autor: Jose Antonio Cobos Marquez (UPM)
  • Autor: Ashu Wang
  • Autor: Sara Martin Horcajo (UPM)
  • Autor: Fatima Romero Rojo (UPM)
  • Autor: Fernando Calle Gomez (UPM)
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Centro de Electrónica Industrial. CEI
  • Departamento: Automática, Ingeniería Eléctrica y Electrónica e Informática Industrial
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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