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Descripción
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| The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm?3 to 1.6 × 1019 cm?3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm?3 had Schottky-like I?V characteristics and only samples doped 1.6 × 1019 cm?3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (? c,Ti/Pd/Ag ~ 5 × 10?4 ? cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (? M,Ti/Pd/Ag ~ 2.3 × 10?6 ? cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity. | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Journal of Electronic Materials |
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ISSN
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0361-5235 |
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Factor de impacto JCR
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1,491 |
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Información de impacto
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Volumen
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45 |
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DOI
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10.1007/s11664-016-4432-6 |
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Número de revista
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6 |
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Desde la página
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2769 |
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2775 |
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