Descripción
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10-?m-thick non-hydrogenated amorphous-silicon (a-Si) films were deposited at relatively high rates (? 10 Å/s) by radio-frequency magnetron sputtering (RFMS) on different large-area buffer-layer-coated glass substrates at deposition temperatures ranging from room temperature (RT) to 300oC. These amorphous samples were subsequently crystallized by means of a continuous-wave diode laser, looking for conditions to reach liquid-phase crystallization. The influence of deposition conditions on the quality of the final micro-crystalline silicon films has been studied. | |
Internacional
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Si |
Nombre congreso
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EU PVSEC 2017 33rd European Photovoltaic Solar Energy Conference and Exhibition |
Tipo de participación
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970 |
Lugar del congreso
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Amsterdam (Países Bajos) |
Revisores
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Si |
ISBN o ISSN
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3-936338-47-7 |
DOI
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10.4229/EUPVSEC20172017-2CV.2.11 |
Fecha inicio congreso
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25/09/2017 |
Fecha fin congreso
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29/09/2017 |
Desde la página
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815 |
Hasta la página
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819 |
Título de las actas
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33rd European Photovoltaic Solar Energy Conference and Exhibition. Proceedings of the International Conference |