Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
MOVPE growth of GaP on Si with As initial coverage
Year:2017
Research Areas
  • Semiconductors ii-vi, iii-v and iv-iv,
  • Technology of devices for engineering
Information
Abstract
The growth of a GaP 50 nm layer on Si by metalorganic vapor phase epitaxy is studied using AsH3 and PH3 pre-exposure at low (550 °C) and high (800 °C) growth temperatures. The samples are characterized by transmission electron microscopy. The results obtained reveal that the use of As as a first coverage layer on top of misorientated Si-substrates favors the formation of a defect-free GaP epitaxial layer, for a wide range of AsH3 pre-exposure times using high growth temperature (800 °C), even though relatively low Si substrate annealing temperatures are used (850 °C) and no homoepitaxial Si layer was first grown. The procedure presented in this work reduces the thermal budget and complexity compared to most previous GaP/Si routines.
International
Si
JCR
Si
Title
Journal of Crystal Growth
ISBN
0022-0248
Impact factor JCR
1,751
Impact info
Volume
464
10.1016/j.jcrysgro.2016.11.077
Journal number
From page
8
To page
13
Month
SIN MES
Ranking
Participants
  • Autor: A. Navarro
  • Autor: E. García-Tabarés
  • Autor: B. Galiana
  • Autor: Pablo Caño Fernández (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: C. Ballesteros
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)