Observatorio de I+D+i UPM

Memorias de investigación
Other publications:
Optimization of a-Si:H possivating layer deposited by PECVD on c-Si
Year:2017
Research Areas
  • Engineering
Information
Abstract
Surface recombination has a large impact on solar cell performance, clearly decreasing both shortcircuit current and open-circuit voltage, and thus its efficiency. Within the current trend of creating thinner and thinner devices, decreasing surface recombination is becoming a crucial issue. Deposition of silicon dioxide (SiO2) or silicon nitride (SiNx) layers is currently the standard procedure to passivate the crystalline silicon (c-Si) surface, obtaining low surface recombination velocities
International
Si
Entity
17th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors DRIP 2017
Place
Valladolid
Pages
281-282
Reference/URL
Publication type
Abstract
Participants
  • Autor: J.A. Andreo
  • Autor: Carlos del Cañizo Nadal (UPM)
  • Autor: David Fuertes Marron (UPM)
Research Group, Departaments and Institutes related
  • Creador: Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física, Ingeniería Eléctrica y Física Aplicada
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)