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Descripción
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| Surface recombination has a large impact on solar cell performance, clearly decreasing both shortcircuit current and open-circuit voltage, and thus its efficiency. Within the current trend of creating thinner and thinner devices, decreasing surface recombination is becoming a crucial issue. Deposition of silicon dioxide (SiO2) or silicon nitride (SiNx) layers is currently the standard procedure to passivate the crystalline silicon (c-Si) surface, obtaining low surface recombination velocities | |
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Internacional
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Si |
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Entidad
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17th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors DRIP 2017 |
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Lugar
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Valladolid |
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Páginas
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281-282 |
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Referencia/URL
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Tipo de publicación
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Abstract |