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Ponencias en congresos:
Comparative analyses of the In exchange in the InAs /GaAs QD system during the capping process with GaAs(Sb) at different growth rates
Año:2019
Áreas de investigación
  • Nanoelectrónica,
  • Epitaxias y crecimientos cristalinos,
  • Técnicas de depósito,
  • Tecnologías a escala nano
Datos
Descripción
InAs/GaAs QDs grown via the Stranski?Krastanov mode have received considerable attention due to their promising properties in different fields such as solar cells, lasers, detectors, etc. However, the structural properties not only of the QDs, but also of the wetting layer (WL) are strongly affected by the nature and growth conditions of the capping layer (CL)1. On one hand, the QD decomposition could be greatly reduced when CLs of GaAsSb are used instead of GaAs2. On the other hand, the GaAs capping rate also allows kinetically controlling the QD dissolution process3 and thus the thickness and content of the WL. However, the precise analysis of the QD/WL system after the capping process in these systems is complicated, as it requires dealing with a large number of data to provide consistent and reliable results. In this work, we statistically compare the features of samples of 10 InAs QD layers after using CLs of GaAs at different growth rates or a GaAsSb alloy. The chemical characterization of the WL together with the measurement of the morphology of several dozens of buried InAs QDs by (S)TEM related techniques allows us to analyse statistically the QD decomposition obtained under both capping processes.
Internacional
Si
Nombre congreso
Microscopy at the Frontiers of Science - mfs2019
Tipo de participación
960
Lugar del congreso
Granada, España
Revisores
Si
ISBN o ISSN
0000000000000
DOI
Fecha inicio congreso
11/09/2019
Fecha fin congreso
13/09/2019
Desde la página
49
Hasta la página
50
Título de las actas
Proceedings
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Lazar Stanojevic (UPM)
  • Autor: Sara Flores (Universidad de Cádiz)
  • : Verónica Braza (Universidad de Cádiz)
  • : Daniel F. Reyes (Universidad de Cádiz)
  • : Alicia Gonzalo (UPM)
  • : Nazaret Ruiz (UCA)
  • : Teresa Ben (UCA)
  • : Jose María Ulloa (UPM)
  • : David González (UCA)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
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