Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Optimisation of SiNx : H anti-reflection coatings for silicon solar cells
Year:2007
Research Areas
  • Electronic circuits,
  • Electronic devices
Information
Abstract
The deposition of SiNx:H as anti-reflection coating has become a standard step in industrial production of silicon solar cells. In the present work the improvement of the anti-reflection properties and thus the improvement of the short circuit current density by deposition of a SiNx:H double layer coating are investigated. It is shown that an optimised double layer coating with indices n(1) approximate to 1.8 and n(2) approximate to 2.1 only leads to an 1.3% improvement of short circuit current in comparison to an optimised single layer coating with n approximate to 1.9. But the deposition of a SiNx:H layer with higher refractive index on the silicon surface is supposed to lead to a good surface and bulk passivation. The passivating properties of the optically optimised double layer coating will he investigated in following experiments.
International
Si
Congress
6th SPANISH CONFERENCE ON ELECTRON DEVICES, PROCEEDINGS
960
Place
El Escorial, Madrid
Reviewers
Si
ISBN/ISSN
978-1-4244-0868-9
Start Date
31/01/2007
End Date
02/02/2007
From page
To page
Participants
  • Autor: Antonio Luque Lopez (UPM)
  • Autor: Carlos del Cañizo Nadal (UPM)
  • Autor: Salvador Ponce Alcántara (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y nuevos conceptos para células solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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