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Memorias de investigación
Patents:
Excess noise reduction method for electronic device, involves performing connection between arranged doping layer and epilayer of FET transistor for eliminating transverse current and thermal noise
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
The method involves using a thermodynamic screen layer that is arranged beneath the electronic device to block the transverse currents which are responsible for excess noise. A doping barrier layer (2) is arranged opposite to an epilayer (4) on the substrate (1) for reducing the transverse currents. A connection is made between the ohmic contact (7) of barrier layer and output from the epilayer of FET transistor which is used in the electronic device to eliminate the thermal noise from the capacitor located beneath the transistor.
International
No
Status
Concedida
application number
WO2007054595-A2
under exploitation
No
Date
18/05/2007
Owner
Universidad Politécnica de Madrid
Participants
  • Autor: Jose Ignacio Izpura Torres (UPM)
Research Group, Departaments and Institutes related
  • Creador: No seleccionado
  • Grupo de Investigación: Microsistemas y materiales electrónicos
  • Departamento: Ingeniería Electrónica
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