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Memorias de investigación
Communications at congresses:
Aluminium Nitride Solidly Mounted BAW Resonators with Iridium Electrodes
Year:2008
Research Areas
  • Electronics engineering
Information
Abstract
In this work we investigated the performance of aluminium nitride (AlN)-based solidly mounted resonators (SMR) made with iridium (Ir) bottom electrodes. Ir/AlN/metal stacks were grown on top of insulating Bragg mirrors composed of alternate λ/4 layers of silicon oxi-carbide (SiOC) and silicon nitride (Si3N4). Ir electrodes of various thicknesses were electron-beam evaporated on different adhesion layers, which also acted as seed layers. AlN was deposited by sputtering after conditioning the Ir electrode by a soft-etch with Ar+ ions, which was essential to achieve high quality AlN films. The structure and morphology of the different layers were analysed by x-ray diffraction (XRD) and atomic force microscopy (AFM). The frequency response of the SMRs was assessed by measuring the input scattering parameter S11 with a network analyzer. The experimental results were fitted to the Butterworth-Van Dyke circuital model. The effective electromechanical coupling factor k2 eff, and the quality factor Q of the resonators were derived from the experimental data. The influence of the thickness, crystal quality and roughness of the Ir bottom electrode
International
Si
Congress
European Frequency and Time Forum (EFTF) 2008
960
Place
Toulouse (FRANCIA)
Reviewers
Si
ISBN/ISSN
3-9805741-8-0
Start Date
22/04/2008
End Date
25/04/2008
From page
1
To page
5
European Frequency and Time Forum (EFTF) 2008 Proceedings
Participants
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: Jesus Sangrador Garcia (UPM)
  • Autor: Sheila González Castilla (UPM)
  • Autor: Enrique Iborra Grau (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica
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