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Descripción
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| This work analyzes some of the physical aspects that must be dealt with for terahertz circuit design based on Schottky diodes beyond 1 THz. The high operation frequencies and the small dimensions that will be required for the devices make it essential to employ physics-based numerical simulators for the device optimization. We present an overview of the possible alternatives and discuss the most adequate ones considering both accuracy and simulation time. As a reference, we employ a Monte Carlo simulator because it provides a numerical solution to the Boltzmann Transport Equation. Since high doping levels will be necessary at these frequencies, the MC analyses should be based on Fermi-Dirac statistics. An efficient method for the inclusion of Fermi-Dirac statistics in MC simulators for non-homogeneous devices is also outlined and the effects of using Fermi-Dirac statistics instead of Maxwell-Boltzmann in Schottky diode models are analyzed. | |
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Internacional
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Si |
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Nombre congreso
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21ST International Symposium on Space Terahertz Technology |
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Tipo de participación
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960 |
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Lugar del congreso
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Oxford, Reino Unido. |
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Revisores
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Si |
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ISBN o ISSN
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DOI
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Fecha inicio congreso
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23/03/2010 |
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Fecha fin congreso
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25/03/2010 |
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Desde la página
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404 |
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Hasta la página
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410 |
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Título de las actas
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Proceedings Conference |