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Memorias de investigación
Communications at congresses:
Optimization of thin AlN sputtered films for X-band BAW resonators
Year:2010
Research Areas
  • Electronic technology and of the communications
Information
Abstract
We investigate the sputter growth of very thin aluminum nitride (AlN) films on iridium electrodes for high frequency filtering applications. The structure and piezoelectric activity of AlN films are assessed through XRD, FTIR, stress and frequency response measurements. A combination of a pre-deposition rf plasma treatment of the Ir bottom electrode followed by a two-step ac reactive sputtering of the AlN film allows to optimize the crystal quality and residual stress of AlN films with thicknesses as low as 160 nm. BAW resonators tuned around 8 GHz are built on top of polished Bragg reflectors composed of porous SiO2 and Ir layers. Material coupling factors kmat2 of 6.7% and quality factors Q up to 900 are achieved. The films obtained are competitive for X-band filter fabrication.
International
Si
Congress
2010 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM
960
Place
San Diego
Reviewers
Si
ISBN/ISSN
1051-0117
Start Date
11/10/2010
End Date
14/10/2010
From page
1
To page
4
2010 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM PROCEEDUNGS
Participants
  • Autor: Enrique Iborra Grau (UPM)
  • Participante: Valeriy Felmetsger (OEM Group Inc.)
  • Autor: Marta Clement Lorenzo (UPM)
  • Autor: José Capilla Osorio (UPM)
  • Autor: Jimena Olivares Roza (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Microsistemas y Materiales Electrónicos
  • Departamento: Tecnología Electrónica
S2i 2019 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)