Observatorio de I+D+i UPM

Memorias de investigación
Artículos en revistas:
Analysis of tellurium as n-type dopant in GaInP: doping, diffusion, memory effect and surfactant properties
Año:2007
Áreas de investigación
  • Industria electrónica
Datos
Descripción
The use of tellurium as n-type dopant for GaAs and InP has several advantages, including a high incorporation efficiency, the very high doping levels achievable and a low diffusion coefficient. However, its use to dope GaxIn1−xP is not straightforward, since it shows several problems like a remarkable memory effect and an acute inertia of the material to become Te-doped, which gives rise to gradual doping profiles. In this paper, all these phenomena are studied and quantified using secondary ion mass spectroscopy (SIMS) and electrochemical CV profiling (ECV) measurements. Concerning the gradual doping profiles, their origin is linked to the interaction of Te and In in the gas phase and on the growth surface. A phenomenological explanation is given for this effect although the exact physical processes behind remain to be defined.
Internacional
Si
JCR del ISI
Si
Título de la revista
J CRYST GROWTH
ISSN
0022-0248
Factor de impacto JCR
1,95
Información de impacto
Volumen
298
DOI
Número de revista
0
Desde la página
794
Hasta la página
799
Mes
ENERO
Ranking
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Beatriz Galiana Blanco (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2022 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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