Observatorio de I+D+i UPM

Memorias de investigación
Research Publications in journals:
Analysis of tellurium as n-type dopant in GaInP: doping, diffusion, memory effect and surfactant properties
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
The use of tellurium as n-type dopant for GaAs and InP has several advantages, including a high incorporation efficiency, the very high doping levels achievable and a low diffusion coefficient. However, its use to dope GaxIn1−xP is not straightforward, since it shows several problems like a remarkable memory effect and an acute inertia of the material to become Te-doped, which gives rise to gradual doping profiles. In this paper, all these phenomena are studied and quantified using secondary ion mass spectroscopy (SIMS) and electrochemical CV profiling (ECV) measurements. Concerning the gradual doping profiles, their origin is linked to the interaction of Te and In in the gas phase and on the growth surface. A phenomenological explanation is given for this effect although the exact physical processes behind remain to be defined.
International
Si
JCR
Si
Title
J CRYST GROWTH
ISBN
0022-0248
Impact factor JCR
1,95
Impact info
Volume
298
Journal number
0
From page
794
To page
799
Month
ENERO
Ranking
Participants
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Beatriz Galiana Blanco (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
S2i 2020 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
Cofinanciación del MINECO en el marco del Programa INNPACTO (IPT-020000-2010-22)