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Descripción
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| ABSTRACT: Density functional theory calculations of certain transition-metal doped semiconductors show a partially occupied relatively narrow band located between valence band and conduction band. These novel systems, containing the metallic band, are called intermediate-band materials. They have enhanced optoelectronic properties which allow an increase in solar energy conversion efficiency of conventional solar cells. We previously proposed III-V, chalcopyrite and sulfide derived compounds showing desirable characteristics to produce the intermediate band of interest inside the band-gap. In order to obtain further intermediate-band material proposals, this work focuses on studing other compounds constituted mainly by tetravalent elements. The first proposal is vanadium substituting Sn atoms in SnS2, the second one is composed by type II silicon clathrate with two possibilities: vanadium substituting Si and Ag occluded in the intra-crystalline cavities. UV-Vis-NIR spectra of some of these systems experimentally synthesized show an agreement with previous theoretical predictions. | |
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Internacional
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Si |
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Nombre congreso
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25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain |
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Tipo de participación
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960 |
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Lugar del congreso
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Valencia |
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Revisores
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Si |
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ISBN o ISSN
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3-936338-26-4 |
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DOI
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Fecha inicio congreso
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06/09/2010 |
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Fecha fin congreso
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10/09/2010 |
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Desde la página
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203 |
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Hasta la página
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206 |
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Título de las actas
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NEW MATERIALS FOR INTERMEDIATE BAND PHOTOVOLTAIC CELLS. THEORETICAL AND EXPERIMENTAL APPROACHES. |