Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
MOVPE growth on Ge substrates for thermophotovoltaic cell applications
Year:2007
Research Areas
  • Electronics engineering
Information
Abstract
A novel MOVPE growth sequence has been proposed to form efficient TPV cells based on germanium. This process consist of the formation of a highly rough GaInP layer on the Ge wafer, while maintaining he control of P diffusion into the germanium to attain the desired p/n junction depth. The textured GaInP layer is aimed to act as a light trapping structure to minimise reflection losses in TPV applications where the emitter is usually placed very close to the converter and thus radiation reaches the cell from multiple directions. Morphological analyses and the quantum efficiency of the grown samples demonstrate that the goals of the process have been achieved.
International
Si
Congress
12th European Workshop on Metalorganic Vapour Phase Epitaxy
960
Place
Bratislava (Eslovaquia)
Reviewers
Si
ISBN/ISSN
Start Date
03/06/2007
End Date
06/06/2007
From page
To page
Participants
  • Autor: Beatriz Galiana Blanco (UPM)
  • Autor: Alejandro Datas Medina (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Ivan Garcia Vara (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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