Observatorio de I+D+i UPM

Memorias de investigación
Communications at congresses:
Integration of III-V materials on Silicon Substrates for Multi-junction Solar Cell Applications
Year:2011
Research Areas
  • Electronic technology and of the communications
Information
Abstract
Abstract?The work presented here aims to reduce the cost of multijunction solar cell technology by developing ways to manufacture them on cheap substrates such as silicon. In particular, our main objective is the growth of III-V semiconductors on silicon substrates for photovoltaic applications. The goal is to create a GaAsP/Si virtual substrates onto which other III-V cells could be integrated with an interesting efficiency potential. This technology involves several challenges due to the difficulty of growing III-V materials on silicon. In this paper, our first work done aimed at developing such structure is presented. It was focused on the development of phosphorus diffusion models on silicon and on the preparation of an optimal silicon surface to grow on it III-V materials.
International
Si
Congress
8th Spanish Conference on Electron Devices
960
Place
Palma de Mallorca
Reviewers
Si
ISBN/ISSN
978-1-4244-7863-7
Start Date
08/02/2011
End Date
11/02/2011
From page
1
To page
4
8th Spanish Conference on Electron Devices
Participants
  • Autor: Elisa Garcia-Tabares Valdivieso (UPM)
  • Autor: Diego Martín Martín (UPM)
  • Autor: Ivan Garcia Vara (UPM)
  • Autor: Ignacio Rey-Stolle Prado (UPM)
  • Autor: Carlos Algora Del Valle (UPM)
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Semiconductores III-V
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física
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