Descripción
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To achieve high efficiency, the intermediate band (IB) solar cell must generate photocurrent from sub-bandgap photons at a voltage higher than that of a single contributing sub-bandgap photon. To achieve the latter, it is necessary that the IB levels be properly isolated from the valence and conduction bands. We prove that this is not the case for IB cells formed with the confined levels of InAs quantum dots (QDs) in GaAs grown so far due to the strong density of internal thermal photons at the transition energies involved. To counteract this, the QD must be smaller. | |
Internacional
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Si |
JCR del ISI
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No |
Título de la revista
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AIP Advances |
ISSN
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2158-3226 |
Factor de impacto JCR
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0 |
Información de impacto
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Volumen
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1 |
DOI
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10.1063/1.3597326 |
Número de revista
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Desde la página
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022125-1 |
Hasta la página
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022125-6 |
Mes
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SIN MES |
Ranking
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