Memorias de investigación
Research Publications in journals:
Influence of temperature and drain current on source and drain resistances in AlGaN/GaN HEMTs
Year:2011

Research Areas

Information
Abstract
International
Si
JCR
Si
Title
SOLID-STATE ELECTRONICS
ISBN
0038-1101
Impact factor JCR
1,438
Impact info
Volume
63
10.1016/j.sse.2011.05.021
Journal number
1
From page
184
To page
188
Month
Ranking
54/116 PHYSICS, APPLIED (SCI); 32/67 PHYSICS, CONDENSED MATTER (SCI); 79/247 ENGINEERING, ELECTRICAL AND ELECTRONIC (SCI)
Participants
  • Autor: r. cuerdo UPM
  • Autor: f. calle UPM

Research Group, Departaments and Institutes related
  • Creador: No seleccionado
  • Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica