Observatorio de I+D+i UPM

Memorias de investigación
Cursos, seminarios y tutoriales:
Challenges of Understanding GaN HEMT Degradation and Reliability and Recent Results. Prof. Steve A. Ringel
Año:2011
Áreas de investigación
  • Ingenierías
Datos
Descripción
Due to their large bandgaps, high breakdown voltages and high electron mobility, GaN High Electron Mobility Transistors (HEMTs) display extraordinary device performance making them the leading advance technology for high power RF applications. However the extreme conditions in which GaN HEMTs are operated challenge both the limits of GaN material properties and also challenge our understanding of the nature in which GaN devices can degrade. This presentation covers recent advances made toward observing defects and bandgap states that are associated with the causes of GaN HEMT degradation under both RF and DC stressing. Specifically, the presentation describes how we have taken a materials science defect characterization method known as Deep Level Optical Spectroscopy and adapted it to be useful to characterize defects and their behavior in actual GaN HEMTs that have been stressed in various fashions. Direct relationships are established between specific traps and HEMT degradation mechanisms, for both MBE and MOCVD devices, with different behaviors observed for both growth methods. This information can be used in the future to create accurate, predictive models of failure mechanisms in GaN HEMT technology for both RF and DC operating conditions.
Internacional
No
Nombre congreso
Seminarios del ISOM
Entidad organizadora
ISOM-DIE-ETSIT-UPM
Nacionalidad Entidad
Sin nacionalidad
Lugar/Ciudad de impartición
ISOM-DIE-ETSIT-UPM
Fecha inicio
26/10/2011
Fecha fin
26/10/2011
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Adrian Hierro Cano (UPM)
  • Autor: S. Ringel
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica
S2i 2021 Observatorio de investigación @ UPM con la colaboración del Consejo Social UPM
Cofinanciación del MINECO en el marco del Programa INNCIDE 2011 (OTR-2011-0236)
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