Memorias de investigación
Communications at congresses:
SiGe nanowires grown by LPCVD using Ga-Au catalysts
Year:2011
Research Areas
  • Physics - Structure of materials,
  • Electronic technology and of the communications
Information
Abstract
The use of Ga-Au alloys as metal catalysts for the growth of SiGe nanowires has been investigated. The grown nanowires are cylindrical and straight, with a defect-free crystalline structure, sharp nanowire-droplet interfaces and an almost constant Ge atomic fraction throughout all their length. These features represent significant improvements over the results obtained using pure Au
International
Si
Congress
Materials Research Society 2011 Fall Meeting
960
Place
Boston (USA)
Reviewers
Si
ISBN/ISSN
02729172
10.1557/opl.2012.34
Start Date
28/11/2011
End Date
02/12/2011
From page
1
To page
6
Low-Dimensional Functional Nanostructures-Fabrication, Characterization and Applications. Materials Research Society Symposium Proceedings 1408, BB10-06 (2012), 6 pp.
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Grupo de Conectividad
  • Departamento: Tecnología Electrónica