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Abstract
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| After the successful implementation of a record performing dual-junction solar cell at ultra high concentration, in this paper we present the transition to a triple-junction device. The semiconductor structure of the solar cells is presented and the main changes in respect to a dual-junction design are briefly discussed. Cross-sectional TEM analysis of samples confirms that the quality of the triple-junction structures grown by MOVPE is good, revealing no trace of antiphase disorder, and showing flat, sharp and clear interfaces between the layers. Triple-junction solar cells manufactured on these structures have shown a peak efficiency of 36.2% at 700X, maintaining the efficiency over 35% from 300 to 1200 suns. With some changes in the structure and a fine tuning of its processing, efficiencies close to 40% at 1000 suns are envisaged. | |
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International
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Si |
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Congress
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8th Spanish Conference on Electron Devices (CDE 2011) |
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960 |
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Place
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Palma de Mallorca |
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Reviewers
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Si |
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ISBN/ISSN
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978-1-4244-7865-1 |
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Start Date
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08/02/2011 |
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End Date
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11/02/2011 |
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From page
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1 |
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To page
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4 |
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8th Spanish Conference on Electron Devices (CDE''''2011), |