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Abstract
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| We investigated the atomic surface properties of differently prepared silicon and germanium (100) surfaces during metal-organic vapour phase epitaxy/chemical vapour deposition (MOVPE/MOCVD), in particular the impact of the MOVPE ambient, and applied reflectance anisotropy/difference spectroscopy (RAS/RDS) in our MOVPE reactor to in-situ watch and control the preparation on the atomic length scale for subsequent III-V-nucleation. The technological interest in the predominant opto-electronic properties of III-Vcompounds drives the research for their heteroepitaxial integration on more abundant and cheaper standard substrates such as Si(100) or Ge(100). | |
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International
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Si |
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Congress
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37th IEEE Photovoltaic Specialist Conference |
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960 |
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Place
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Seattle (USA) |
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Reviewers
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Si |
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ISBN/ISSN
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978-1-4244-9965-6 |
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Start Date
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19/06/2011 |
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End Date
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24/06/2011 |
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From page
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2538 |
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To page
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2542 |
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37th IEEE Photovoltaic Specialist Conference |