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Abstract
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| We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer. | |
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International
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JCR
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Title
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Appl. Phys. Lett. 100, |
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ISBN
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1077-3118 |
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Impact factor JCR
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Impact info
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Volume
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100 |
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10.1063/1.3674986 |
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Journal number
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From page
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012103 |
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To page
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012103 |
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Month
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SIN MES |
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Ranking
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