Memorias de investigación
Research Publications in journals:
Effect of the oxygen isoelectronic substitution in Cu2ZnSnS4 and its photovoltaic application
Year:2012
Research Areas
  • Chemistry,
  • Electric engineers, electronic and automatic (eil),
  • Materials for electric engineering and electronics,
  • Technologies of integration for engineering and electronics
Information
Abstract
The optoelectronic properties of Cu2ZnSnS4 and environmental considerations have attracted significant interest for photovoltaics. Using first-principles, we analyze the possible improvement of this material as a photovoltaic absorber via the isoelectronic substitution of S with O atoms. The evolution of the acceptor level is analyzed with respect to the atomic position of the nearest neighbors of the O atom. We estimate the maximum efficiency of this compound when used as a light absorber. The presence of the sub-band gap level below the conduction band could increases the solar-energy conversion with respect to the host.
International
Si
JCR
Si
Title
Thin Solid Films
ISBN
0040-6090
Impact factor JCR
1,89
Impact info
Volume
520
10.1016/j.tsf.2012.03.020
Journal number
15
From page
5011
To page
5013
Month
SIN MES
Ranking
Participants
Research Group, Departaments and Institutes related
  • Creador: Grupo de Investigación: Silicio y Nuevos Conceptos para Células Solares
  • Centro o Instituto I+D+i: Instituto de Energía Solar
  • Departamento: Electrónica Física