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Descripción
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| Ge(100) substrates essential for subsequent IIIV integration were studied in the hydrogen ambient of a metalorganic vapor phase epitaxy reactor. We confirmed thermal oxide and carbon removal by X-ray photoelectron spectroscopy, characterized the (2 x 1)/(1 x 2) surface reconstruction by low energy electron diffraction, and employed reflection anisotropy spectroscopy for optical in situ analysis. Our Ge(100) spectra de- viate from reference data of clean surfaces prepared in ultra-high vacuum, most probably due to the presence of hydrogen bonds. The observation was correlated with Fourier-transform infrared spectroscopy showing coupled HGeGeH stretch modes associated with a monohydride termination of the Ge(100) surface. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) | |
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Internacional
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Si |
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JCR del ISI
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Si |
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Título de la revista
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Physica Status Solidi-Rapid Research Letters |
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ISSN
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1862-6254 |
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Factor de impacto JCR
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2,218 |
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Información de impacto
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Volumen
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6 |
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DOI
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10.1002/pssr.201206028 |
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Número de revista
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4 |
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Desde la página
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178 |
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Hasta la página
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180 |
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Mes
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ABRIL |
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Ranking
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21/116 PHYSICS, APPLIED (SCI); 15/67 PHYSICS, CONDENSED MATTER (SCI); 41/219 MATERIALS SCIENCE, MULTIDISCIPLINARY (SCI) |