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Descripción
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| We present a detailed study of the wavelength influence in pulsed laser annealing of amorphous silicon thin films, comparing the results for material modification at different fluence regimes both in the three fundamental harmonics of standard DPSS laser sources, UV (355 nm), visible (532 nm) and IR (1064 nm), and KrF (248 nm) excimer laser sources. Samples of hydrogenated amorphous silicon thin films were irradiated and characterized with MicroRaman techniques. A finite element model (FEM) was developed in COMSOL to simulate the process. The numerical a | |
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Internacional
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Si |
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Nombre congreso
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LANE 2012. 7th International Conference on Photonics Technologies. |
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Tipo de participación
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960 |
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Lugar del congreso
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Fürth (Alemania) |
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Revisores
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Si |
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ISBN o ISSN
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1875-3892 |
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DOI
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Fecha inicio congreso
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12/11/2012 |
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Fecha fin congreso
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15/11/2012 |
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Desde la página
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286 |
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Hasta la página
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294 |
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Título de las actas
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Physics Procedia Volume 39, 2012, Laser Assisted Net shape Engineering 7 (LANE 2012) |