Observatorio de I+D+i UPM

Memorias de investigación
Cursos, seminarios y tutoriales:
Javier Rodríguez Madrid. ISOM-DIE-UPM. High precision pressure sensors based on SAW devices fabricated on diamond substrates
Año:2012
Áreas de investigación
  • Ingenierías,
  • Tecnología electrónica y de las comunicaciones
Datos
Descripción
For the last few decades surface acoustic wave devices have been used not only for wireless communication systems, but also for gas, temperature and pressure sensors due to their intrinsic energy confinement in a narrow region underneath the surface. Due to the sensitivity increases when the frequency is higher, this is one of the most important factors in the selection of a suitable substrate for SAW sensors. In order to achieve higher frequencies, either the selection of a suitable material with higher phase velocity or a smaller IDT period must be considered. Aluminium nitride (AlN) deposited on chemical vapour deposition diamond is a very attractive structure for high frequency SAW devices. The main problem of synthetic diamond is its high surface roughness that worsens the sputtered AlN quality and hence the device response. We have then analysed the influence of the surface roughness on the crystal quality of the sputtered thin AlN film and device response. Moreover, in this work we use a 20 µm thick nanocrystalline diamond free standing film, whose silicon substrate was removed by chemical etching, to fabricate high frequency SAW resonators operating in the 10-14 GHz frequency range. This structure not only allows depositing high c-axis oriented AlN due to the low surface roughness of the nucleation side, but also the membrane is free to move so it provides pressure sensitivity. A SAW based sensor pressure with a sensibility of 3 Mhz/bar has been fabricated.
Internacional
No
Nombre congreso
Cursos y Seminarios del ISOM
Entidad organizadora
ISOM-UPM
Nacionalidad Entidad
Sin nacionalidad
Lugar/Ciudad de impartición
Madrid, España
Fecha inicio
11/05/2012
Fecha fin
11/05/2012
Esta actividad pertenece a memorias de investigación
Participantes
  • Autor: Miguel Angel Sanchez Garcia (UPM)
  • Autor: Juan Rodriguez Madrid (UPM)
Grupos de investigación, Departamentos, Centros e Institutos de I+D+i relacionados
  • Creador: Grupo de Investigación: Grupo de Dispositivos Semiconductores del ISOM
  • Centro o Instituto I+D+i: Instituto Universitario de Sistemas Optoelectrónicos y Microtecnología
  • Departamento: Ingeniería Electrónica
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