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Abstract
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| Vicinal Ge(100) is the established substrate for III-V nucleation regarding high efficiency opto-electronic devices such as multi-junction solar cells. We studied vicinal Ge(100) surfaces prepared by H2 annealing in metalorganic vapor phase epitaxy (MOVPE) environment prior to heteroepitaxy. A contamination-free MOVPE-to-UHV transfer system allowed to correlate in situ reflection anisotropy spectroscopy (RAS) and surface science techniques. Annealing in H2 removed oxides and carbon from the substrates as confirmed by X-ray photoemission spectroscopy. Low energy electron diffraction patterns indicated a (2 × 1) majority surface reconstruction domain. The presence of coupled Ge-H monohydride was confirmed via Fourier-transform infrared spectroscopy. The RA spectrum of the hydrogen terminated Ge(100) surface featured characteristic differences compared to the RA spectrum of UHV-prepared clean Ge(100) in literature [1]. [1] Rossow et al., JVSTB18(2000)2229 | |
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International
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Si |
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Congress
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76. Jahrestagung der Deutsche Physikalische Geselschaft und DPG-Frühjahrstagung |
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960 |
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Place
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Berlin (Germnay) |
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Reviewers
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Si |
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ISBN/ISSN
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0-000000-00-0 |
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Start Date
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25/03/2012 |
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End Date
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30/03/2012 |
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From page
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1 |
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To page
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1 |
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Proc. 76. Jahrestagung der Deutsche Physikalische Geselschaft und DPG-Frühjahrstagung |